msf 6 n 9 0 9 00v n - channel mosfet publication order number: [ msf 6 n 9 0 ] ? bruckewell technology corporation rev. a - 2014 description the ms1 5 n 50 is a n - channel enhancement - mode mosfet, providing the designer with the best combination of fast switching, ruggedized device design, low on - resistance and cost effectiveness. the i to - 220 package is universally preferred for all com mercial - industrial applications features ? rds(on) (max 2.4 )@vgs=10v ? gate charge (typical 33 nc) ? improved dv/dt capability, high ruggedness ? 100% avalanche tested ? maximum junction temperature range (150?c) ? rohs compliant packag e application ? power factor correction ? lcd tv power ? full and half bridge power packing & order information 50/tube ; 1,000/box graphic symbol maximum ratings and electrical characteristics absolute maximum ratings symbol parameter value unit v dss drain - source voltage 900 v v gs gate - source voltage 30 v i d drain current - continuous (tc=25 c ) 6 a drain current - continuous (tc= 100 c ) 3.8 a i dm drain current pulsed 24 a e as s ingle pulsed avalanche energy 650 mj e ar repetitive avalanche energy 1 6.7 mj dv/dt peak diode recovery dv/dt 4. 5 v/ns
msf 6 n 9 0 9 00v n - channel mosfet publication order number: [ msf 6 n 9 0 ] ? bruckewell technology corporation rev. a - 2014 absolute maximum ratings symbol parameter value unit p d total power dissipation ( tc = 25 c) derating factor above 25 c 56 w 0.48 w/ c t j ,t stg operating and storage temperature range - 55 to +150 c t l maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds 300 c ? drain current limited by maximum junction temperature thermal characteristics (tc=25c unless otherwise noted) symbol parameter max. unit s r jc junction - to - case 2.25 c /w r ja junction - to - ambient 62.5 on characteristics symbol parameter test conditions min typ. max. unit s v gs gate threshold voltage v ds =v gs ,i d =250a 3 .0 -- 5 .0 v r ds(on) static drain - source on - resistance v gs =10v,i d = 3 a -- 1.95 2.4 off characteristics symbol parameter test conditions min typ. max. unit s b v dss drain - source breakdown voltage v gs =0 v , i d =250a 9 00 -- -- v b v dss / t j breakdown voltage temperature coefficient i d =250a, referenced to 25 c -- 1.0 3 -- v/ c i dss zero gate voltage drain current v ds = 9 0 0v , v gs = 0 v v ds = 72 0v , t c = 125 c -- -- 10 100 a i gss f gate - body leakage current, forward v gs = 3 0v , v d s = 0 v -- -- 100 n a i gssr gate - body leakage current, reverse v gs = - 3 0v , v d s = 0 v -- -- - 100 n a dynamic cha racteristics symbol parameter test conditions min typ. max. unit s c iss input capacitance v ds =25v, v gs =0v, f=1.0mhz -- 1500 2010 pf c oss output capacitance -- 145 190 pf c rss reverse transfer capacitance -- 15 20 pf
msf 6 n 9 0 9 00v n - channel mosfet publication order number: [ msf 6 n 9 0 ] ? bruckewell technology corporation rev. a - 2014 dynamic characteristics symbol parameter test conditions min typ. max. unit s t d(on) turn - on time v ds = 4 5 0 v, i d = 6 a, r g =25 -- 40 80 ns t r turn - on time -- 120 240 ns t d(off) turn - off delay time -- 60 120 ns tf turn - off fall time -- 70 140 ns q g total gate charge v ds = 720 v,i d = 6 a , v gs = 10 v -- 33 45 nc q gs gate - source charge -- 10 -- nc q g d gate - drain charge -- 13 - - nc source - drain diode maximum ratings and characteristics symbol parameter test conditions min typ. max. unit s i s continuous source - drain diode forward current -- -- 6 .0 a i sm ism pulsed source - drain diode forward current -- -- 24 .0 v sd source - dra in diode forward voltage i s = 6 a , v gs = 0v -- -- 1. 4 v t rr reverse recovery time i s = 6 a , v gs = 0v dif/dt=100a/s -- 78 0 -- ns q rr reverse recovery charge -- 9 .0 -- c notes; 1. repetitive rating: pulse width limited by maximum junction temperature 2. l=34mh, i as = 6 a, v dd =5 0 v, r g =25 , starting t j =25 3. i sd Q 6 a , di/dt Q 2 00a/ s,v dd Q bv dss , starting t j =25 4. pulse test: pulse width Q 300 s, duty cycle Q 2% 5. essentially independent of operating temperature
msf 6 n 9 0 9 00v n - channel mosfet publication order number: [ msf 6 n 9 0 ] ? bruckewell technology corporation rev. a - 2014 characteristics curve fig.1 - on region characteristics fig. 2 - transfer characteristics fig.3 - on resistance variation vs drain cur rent and gate voltage fig.4 - body diode forward voltage variation with source current and temperature fig.5 - capacitance characteristics fig.6 - gate charge characteristics
msf 6 n 9 0 9 00v n - channel mosfet publication order number: [ msf 6 n 9 0 ] ? bruckewell technology corporation rev. a - 2014 characteristics curve fig. 7 - breakdown voltage variation vs temperature f ig. 8 - on - resistance variation vs temperature fig. 9 - maximum safe operating area fig. 10 - maximum drain current vs case temperature fig.11 - transient thermal response curve
msf 6 n 9 0 9 00v n - channel mosfet publication order number: [ msf 6 n 9 0 ] ? bruckewell technology corporation rev. a - 2014 characteristics test circuit & waveform fig 12. resistive switching test circuit & waveforms fig 13. gate charge test circuit & waveform fig 14. unclamped inductive switching test circuit & waveforms
msf 6 n 9 0 9 00v n - channel mosfet publication order number: [ msf 6 n 9 0 ] ? bruckewell technology corporation rev. a - 2014 disclaimer all product, product specifications and data are subject to change without notice to improve reliabil ity, function or design or otherwise. bruckewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, bruckewell), disclaim any and all liability for any errors, inaccuracies or incompletene ss contained in any datasheet or in any other disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, bruckewell disclaims (i) any and all liability arising out of the application or use of any product. (ii) any and all liability, including without limitation special, consequential or incidental damages. (i ii) any and all implied warranties, including warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of products for certain types of applications are based on bruckewells knowledge of typi cal requirements that are often placed on bruckewell products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsibility to validate that a partic ular product with the properties described in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. product specifications do not expand or otherwise modify bruckewells terms and conditions of purchase, including but not limited to the warranty expressed therein.
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